Carbon cluster emitters in silicon carbide

Carbon p Electron Ferromagnetism in Silicon Carbide

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic cou...

Superhydrophobic carbon nanotube/silicon carbide nanowire nanocomposites

a r t i c l e i n f o The composite film of carbon nanotubes and silicon carbide nanowires was synthesized directly on the silicon substrate by the catalyst-assisted method. The carbon nanotubes crimped together decorated with silicon carbide nanowires covering the whole substrate. The appropriate amount of aluminum powders is a crucial factor to achieve the composite film. The composite film e...

The Mechanical and Electronic Properties of Carbon-Rich Silicon Carbide

A systematic investigation of structural, mechanical, anisotropic, and electronic properties of SiC₂ and SiC₄ at ambient pressure using the density functional theory with generalized gradient approximation is reported in this work. Mechanical properties, i.e., the elastic constants and elastic modulus, have been successfully obtained. The anisotropy calculations show that SiC₂ and SiC₄ are both...

Graphene Formation on the Carbon face of Silicon Carbide

In this thesis, we study the structure of epitaxial graphene formed on polar faces of SiC the (0001) face, also known as the Si-face, and the (0001 ) face, known as the C-face. On both polar surfaces, graphene films are prepared in ultra-high vacuum (UHV), in environments either of argon or cryogenically purified neon, or in a low-pressure background of disilane. Characterization of graphene is...

Silicon Nitride and Silicon Carbide